By Sarhan M. Musa

Computational Finite aspect equipment in Nanotechnology demonstrates the functions of finite aspect equipment in nanotechnology for a variety of fields. Bringing jointly contributions from researchers around the globe, it covers key techniques in addition to state-of-the-art study and purposes to encourage new advancements and destiny interdisciplinary learn. specifically, it emphasizes the significance of finite point equipment (FEMs) for computational instruments within the improvement of effective nanoscale structures.

The booklet explores quite a few issues, together with:

  • A novel FE-based thermo-electrical-mechanical-coupled version to review mechanical pressure, temperature, and electrical fields in nano- and microelectronics
  • The integration of disbursed aspect, lumped point, and system-level equipment for the layout, modeling, and simulation of nano- and micro-electromechanical platforms (N/MEMS)
  • Challenges within the simulation of nanorobotic platforms and macro-dimensions
  • The simulation of buildings and techniques akin to dislocations, progress of epitaxial motion pictures, and precipitation
  • Modeling of self-positioning nanostructures, nanocomposites, and carbon nanotubes and their composites
  • Progress in utilizing FEM to investigate the electrical box shaped in needleless electrospinning
  • How molecular dynamic (MD) simulations might be built-in into the FEM
  • Applications of finite point research in nanomaterials and platforms utilized in medication, dentistry, biotechnology, and different areas

The e-book comprises quite a few examples and case experiences, in addition to fresh purposes of microscale and nanoscale modeling platforms with FEMs utilizing COMSOL Multiphysics® and MATLAB®. A one-stop reference for pros, researchers, and scholars, this is often additionally an available creation to computational FEMs in nanotechnology for these new to the field.

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35. J. Knoch, B. Lengeer, and J. Appenzeller, Quantum simulation of ultra-short channel singlegated n-MOSFET, IEEE Trans. Electron. Dev. 49, 1212 (2002). 36. Z. Ren, R. Venugopal, S. Goasguen, S. S. 0: A twodimensional simulator for quantum transport in nanoscale MOSFETs, IEEE Trans. Electron. Dev. 50, 1914 (2003). 37. Z. Ren, R. Venugopal, S. S. Lundstrom, Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green’s function simulation, IDEM, Tech. , p.

Opt. Technol. Lett. 43(6), 495–498 (2004). 49. J. E. L. Chow, Complex image method for analyzing multiconductor transmission lines in multilayered dielectric media, Int. Symp. Dig. Antennas Propag. pp. 862–865, London, Ontario, Canada (1991). 50. H. Ymeri, B. Nauwelaers, and K. Maex, Frequency-dependent mutual resistance and inductance formulas for coupled IC interconnects on an Si-SiO2 substrate, Integration, the VLSI J. 30, 133–141 (2001). 51. E. Y. Chou, Characteristics of coplanar transmission lines multilayer substrates: Modeling and experiments, IEEE Trans.

7] using SiLK as a dielectric and Edelstein et al. [8] using carbonized glass (SiCOH). As described in Ref. [7], the repeated unit in the test structure consists of three metal levels (MC, M1, and M2) connected by two level of vias (V1 and V2). MC and M2 are local interconnects in the chain, and M1 is a landing pad in the stacked via structure. V1 connects MC and M1, and V2 connects M1 and M2. In the experiment, the via chain is 50 units long. Some of the following dimensions of the metal and barrier films were not reported and had to be assumed.

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