By Sanjay Dabral, Timothy J. Maloney

ISBN-10: 0471253596

ISBN-13: 9780471253594

The 1st complete advisor to ESD defense and I/O designBasic ESD and I/O layout is the 1st booklet dedicated to ESD (electrostatic discharge) safeguard and input/output layout. Addressing the becoming call for in for high-speed I/O designs, it bridges the distance among ESD examine and present VLSI layout practices and gives a much-needed reference for training engineers who're often referred to as upon to benefit the topic at the job.This quantity offers an built-in remedy of ESD, I/O, and procedure parameter interactions that either I/O designers and strategy designers can use. It examines key elements in I/O and ESD layout and checking out, and is helping the reader contemplate ESD and reliability matters up entrance while making I/O offerings. Emphasizing readability and ease, this e-book specializes in layout ideas that may be utilized greatly as this dynamic box maintains to conform. simple ESD and I/O layout: * Describes innovations for design-oriented ESD safeguard * Explains structure tools that increase ESD defense designs * Addresses simple I/O designs, together with new difficulties corresponding to combined voltage interfaces * Discusses fabrication facets affecting ESD and I/O security * Illustrates techniques utilizing a number of figures and examples * Expresses equipment physics by way of basic electric circuit versions * Cross-references the cloth to plain texts within the fieldEssential for engineers in and an individual designing circuits, platforms, or units for destiny applied sciences, simple ESD and I/O layout is usually an invaluable reference for researchers and graduate scholars interested in middle VLSI layout or desktop structure.

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Interactions such as nonunifonn doping and heat generation defy analytical solutions, and simulation is necessary. These simulations can help predict where the second breakdown will be initiated and help optimize a device. It should be pointed out that if one were to base all protection on forwardbiased junctions, which dissipate less power/unit volume, then the second breakdown phenomena is largely avoided and these isothennal tools are of limited significance. 4. NON-BREAKDOWN DEViCES Non-breakdown devices are primarily diodes, MOSFET, and bipolar junction transistors (BJTs).

This device may be diode connected to form a clamp that triggers on only at high voltage and it is off at nonnal operating voltage. Even though this device operates in a conduction mode, it may suffer snapback. Here the thick gate oxide helps prevent oxide damage. The DIFIDW is different from a TFO primarily in its use of an N-well as the source and drain. This option was valid when little aluminum-to-silicon contact barriers were implemented. With barriers placed in the contacts, the necessity to have a deep N-well (to prevent aluminum spiking) has diminished and TFO devices are sufficient.

And a:2 [Yang, 1978J, as shown in Eq. 2-5. When the sum approaches 1, the current increases dramatically: (2-1) (2-2) (2-3) (2-4) (2-5) where a:l and a:2 are the current gain ofPNP and NPN transistors, respectively; and lc2 are the collector currents and leol and leo2 the reverse-biased col· lector currents of the NPN and PNP transistors, respectively. It is seen that as the sum ofa:j and a:2 tends to 1, I increases drastically. This is the case when the SCR latches up. This explains the latchup condition, but how does the SCR get initiated into latchup?

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Basic ESD and IO design by Sanjay Dabral, Timothy J. Maloney


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